Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 100 V 17 A 79 W D2PAK

IRF530NSPbF

IRF530NLPbF

HEXFET

Power MOSFET

03/10/04

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 2.15

θJA

Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40

Thermal Resistance

www.irf.com 1

DSS

= 100V

DS(on)

= 90mΩ

= 17A

Advanced HEXFET

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D

Pak is a surface mount power package capable of accommodating

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

Pak is suitable for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF530NL) is available for low-profile applications.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Description

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V  17

@ T

= 100°C Continuous Drain Current, V

@ 10V  12 A

Pulsed Drain Current  60

= 25°C Power Dissipation 3.8 W

= 25°C Power Dissipation 70 W

Linear Derating Factor 0.47 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 9.0 A

Repetitive Avalanche Energy 7.0 mJ

dv/dt Peak Diode Recovery dv/dt  7.4 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Pak

IRF530NSPbF

TO-262

IRF530NLPbF

°C/W

PD - 95100

Summary of content (11 pages)

PAGE 1
PD - 95100 IRF530NSPbF IRF530NLPbF ® HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS(on) = 90mΩ G ID = 17A S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
PAGE 2
IRF530NS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRF530NS/LPbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.5 TJ = 25 ° C TJ = 175 ° C V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 Fig 3.
PAGE 4
IRF530NS/LPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1200 Ciss 800 Coss 400 Crss 0 1 10 20 VGS , Gate-to-Source Voltage (V) 1600 VDS , Drain-to-Source Voltage (V) VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 0 100 ID = 9.0A FOR TEST CIRCUIT SEE FIGURE 13 0 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 TJ = 175 ° C 10 1 TJ = 25 ° C V GS = 0 V 0.4 0.6 0.8 1.0 1.
PAGE 5
IRF530NS/LPbF 20 VDS VGS ID , Drain Current (A) 16 D.U.T. RG 12 RD + -VDD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1.
PAGE 6
15V L VDS D.U.T RG 20V VGS IAS tp DRIVER + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) IRF530NS/LPbF 200 ID 3.7A 6.4A 9.0A TOP 160 BOTTOM 120 80 40 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T.
PAGE 7
IRF530NS/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF530NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E C T IF IE R L OGO N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" P AR T N U M B E R F 5 30 S AS S E M B L Y L O T CO D E D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T
PAGE 9
IRF530NS/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.
PAGE 10
IRF530NS/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.
PAGE 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.