Datasheet

HEXFET
®
Power MOSFET
PD -95037A
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7103PbF
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
V
DSS
= 50V
R
DS(on)
= 0.130Ω
I
D
= 3.0A
11/16/04
Parameter Min. Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient    62.5 °C/W
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 3.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 2.3
I
DM
Pulsed Drain Current  10
P
D
@T
C
= 25°C Power Dissipation 2.0
Linear Derating Factor 0.016 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt  4.5 V/nS
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150
Absolute Maximum Ratings
A
Thermal Resistance Ratings
W
°C