Datasheet

IRF7343PbF
www.irf.com 7
Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 18. Typical On-Resistance Vs. Gate
Voltage
P-Channel
0 2 4 6 8 10 12
0.080
0.120
0.160
0.200
0.240
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -4.5V
VGS = -10V
(Ω)
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-3.4 A
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
-1.5A
-2.7A
-3.4A
R
DS(on)
, D
ra
in
-to
-S
o
u
rc
e
O
n
R
e
s
is
ta
n
ce
( Ω )
0.05
0.15
0.25
0.35
0.45
2581114
A
GS
-V , Gate-to-Source Voltage (V)
I = -3.4 A
D