Datasheet

www.irf.com 1
05/23/07
IRF7821PbF
HEXFET
®
Power MOSFET
Notes through are on page 10
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
Applications
l High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
V
DSS
R
DS(on)
max Q
g
(typ.)
30V 9.1mW@V
GS
= 10V 9.3nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
f
W
P
D
@T
A
= 70°C
Power Dissipation
f
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JL
Junction-to-Drain Lead
g
––– 20 °C/W
R
θ
JA
Junction-to-Ambient
fg
––– 50
-55 to + 155
2.5
0.02
1.6
Max.
13.6
11
100
± 20
30
PD - 95213A
l Lead-Free

Summary of content (10 pages)