PD - 95213A IRF7821PbF HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max Qg(typ.) 30V 9.1mW@VGS= 10V 9.3nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Parameter Max.
IRF7821PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ Min. Typ. Max. Units 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.025 7.0 ––– 9.1 V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 13A Gate Threshold Voltage ––– 1.0 9.5 ––– 12.5 ––– VGS = 4.5V, ID = 10A VDS = VGS, ID = 250µA Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– - 4.9 ––– ––– 1.
IRF7821PbF 100 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 10 1 2.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 2.5V 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 1 0.1 0.1 1 10 0.1 100 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 TJ = 150°C 10.0 T J = 25°C 1.
IRF7821PbF 10000 12 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED VGS , Gate-to-Source Voltage (V) ID= 10A C, Capacitance (pF) Crss = Cgd Coss = Cds + Cgd Ciss 1000 Coss Crss 100 8 6 4 2 0 10 1 10 0 100 5 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100.0 1.0 T J = 25°C OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1 0.1 0.1 1.0 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1.5 100µsec 1msec VGS = 0V 0.
IRF7821PbF 2.6 VGS(th) Gate threshold Voltage (V) 14 ID , Drain Current (A) 12 10 8 6 4 2 2.2 1.8 ID = 250µA 1.4 1.0 0 25 50 75 100 125 -75 150 -50 -25 25 50 75 100 125 150 T J , Temperature ( °C ) T J , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0 Fig 10. Threshold Voltage Vs. Temperature 100 Thermal Response ( Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.
30 100 ID = 13A 25 20 15 T J = 125°C 10 T J = 25°C 5 0 2.0 4.0 6.0 8.0 10.0 VGS, Gate-to-Source Voltage (V) EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( mΩ) IRF7821PbF ID 4.5A TOP 8.0A BOTTOM 10A 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13c. Maximum Avalanche Energy Vs. Drain Current Fig 12. On-Resistance Vs. Gate Voltage LD VDS 15V L VDS VDD DRIVER D.U.T D.U.
IRF7821PbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period + - Body Diode Forward Current di/dt D.U.T.
IRF7821PbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses.
IRF7821PbF SO-8 Package Details Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( %$6,& H H %$6,& + . / \ ',0 % $ + > @ ( $ ; H H $ ; E > @ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& . [ & \
IRF7821PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max.