Datasheet

4/7/08
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
2
Pak
IRFS3306PbF
TO-220AB
IRFB3306PbF
TO-262
IRFSL3306PbF
S
D
G
S
D
G
S
D
G
D
D
D
IRFB3306PbF
IRFS3306PbF
IRFSL3306PbF
GDS
Gate Drain Source
S
D
G
V
DSS
60V
R
DS
(
on
)
typ.
3.3m
:
max.
4.2m
:
I
D
(Silicon Limited)
160A
c
I
D
(Package Limited)
120A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
k –––
0.65
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 –––
R
θ
JA
Junction-to-Ambient, TO-220
k ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
jk
––– 40
-55 to + 175
± 20
1.5
10lb
x
in (1.1N
x
m)
Max.
160
c
110
c
620
120
A
°C
°C/W
300
184
See Fig. 14, 15, 22a, 22b,
230
14
PD - 97098B