Datasheet

Notes  through  are on page 11
www.irf.com 1
04/22/04
IRFB4710PbF
IRFS4710PbF
IRFSL4710PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
100V 0.014Ω 75A
PD- 95146
D
2
Pak
IRFS4710
TO-220AB
IRFB4710
TO-262
IRFSL4710
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 75
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 53 A
I
DM
Pulsed Drain Current  300
P
D
@T
A
= 25°C Power Dissipation  3.8 W
P
D
@T
C
= 25°C Power Dissipation 200
Linear Derating Factor 1.4 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt  8.2 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.74
R
θCS
Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient ––– 40