Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 55 V 3.7 A 2.1 W SOT-223

IRFL4105PbF

HEXFET

Power MOSFET

DSS

= 55V

DS(on)

= 0.045Ω

= 3.7A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has the

added advantage of improved thermal performance due to

an enlarged tab for heatsinking. Power dissipation of 1.0W

is possible in a typical surface mount application.

05/25/04

Description

 Surface Mount

 Advanced Process Technology

 Ultra Low On-Resistance

 Dynamic dv/dt Rating

 Fast Switching

 Fully Avalanche Rated

 Lead-Free

SOT-223

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Parameter Typ. Max. Units

θJA

Junction-to-Amb. (PCB Mount, steady state)* 90 120

θJA

Junction-to-Amb. (PCB Mount, steady state)** 50 60

Thermal Resistance

°C/W

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V** 5.2

@ T

= 25°C Continuous Drain Current, V

@ 10V* 3.7

@ T

= 70°C Continuous Drain Current, V

@ 10V* 3.0

Pulsed Drain Current  30

= 25°C Power Dissipation (PCB Mount)** 2.1 W

= 25°C Power Dissipation (PCB Mount)* 1.0 W

Linear Derating Factor (PCB Mount)* 8.3 mW/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 110 mJ

Avalanche Current 3.7 A

Repetitive Avalanche Energy 0.10 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

STG

Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

www.irf.com 1

PD- 95319

Summary of content (9 pages)

PAGE 1
PD- 95319 IRFL4105PbF HEXFET® Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.045Ω G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFL4105PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRFL4105PBF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 10 4.5V 20µs PULSE WIDTH TC = 25°C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 1 10 A 10 4.5V 20µs PULSE WIDTH TJ = 150°C 1 0.1 100 1 Fig 2. Typical Output Characteristics, TJ = 150oC Fig 1. Typical Output Characteristics, TJ = 25oC 2.
PAGE 4
IRFL4105PbF 1000 C, Capacitance (pF) Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) 1200 I D = 3.7A VDS = 24V VDS = 15V 16 800 12 Coss 600 400 Crss 200 0 10 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 1 8 0 100 10 A 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRFL4105PBF 10V VGS QGS RD VDS QG QGD D.U.T. RG + - VDD VG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 90% 50KΩ .2µF 12V .3µF D.U.T. + V - DS 10% VGS VGS tr td(on) 3mA IG t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.
PAGE 6
15V L VDS D.U.T RG IAS 20V DRIVER + - VDD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFL4105PbF 300 TOP 250 BOTTOM ID 1.7A 3.0A 3.7A 200 150 100 50 0 VDD = 25V 25 50 A 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.
PAGE 7
IRFL4105PBF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFL4105PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 PART NUMBER INTERNATIONAL RECTIFIER LOGO FL014 314P TOP 8 LOT CODE AXXXX A = ASSEMBLY SITE DATE CODE CODE (YYWW) YY = YEAR WW = WEEK P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) BOTTOM www.irf.
PAGE 9
IRFL4105PBF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2.05 (.080) 1.95 (.077) TR 4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065) 7.55 (.297) 7.45 (.294) 16.30 (.641) 15.70 (.619) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 2.30 (.090) 2.10 (.083) 7.10 (.279) 6.90 (.272) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.