Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 100 V 51 A 180 W TO-247

IRFP3710PbF

HEXFET

Power MOSFET

PD - 95053A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-247AC package is universally preferred for all

commercial-industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-

247AC contribute to its wide acceptance throughout

the industry.

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 57

@ T

= 100°C Continuous Drain Current, V

@ 10V 40 A

Pulsed Drain Current  180

= 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 530 mJ

Avalanche Current 28 A

Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case  0.75

θCS

Case-to-Sink, Flat, Greased Surface 0.50  °C/W

θJA

Junction-to-Ambient  62

Thermal Resistance

DSS

= 100V

DS(on)

= 0.025Ω

= 57A

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

5/26/05

l Lead-Free

TO-247AC

Summary of content (8 pages)

PAGE 1
PD - 95053A IRFP3710PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.025Ω G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFP3710PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRFP3710PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 100 4.5V 10 20µs PULSE WIDTH TC = 25°C 1 0.1 1 10 A 4.5V 10 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 3.0 TJ = 25°C 100 TJ = 175°C 10 V DS = 50V 20µs PULSE WIDTH 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 A 100 Fig 2.
PAGE 4
IRFP3710PbF 6000 V GS , Gate-to-Source Voltage (V) 5000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V DS = 80V V DS = 50V V DS = 20V 16 Ciss 4000 I D = 28A 12 3000 Coss 2000 Crss 1000 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 VDS , Drain-to-Source Voltage (V) 80 120 160 200 A Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRFP3710PbF 60 VGS 50 ID , Drain Current (A) RD V DS D.U.T. RG + -VDD 40 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 0 90% 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.
PAGE 6
15V L VDS D.U.T RG IAS 20V DRIVER + V - DD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) IRFP3710PbF 1200 TOP 1000 BOTTOM 800 600 400 200 0 VDD = 25V 25 V(BR)DSS ID 11A 20A 28A 50 75 100 125 150 Starting TJ , Junction Temperature (°C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10 V QGS 12V .2µF .3µF D.U.T.
PAGE 7
IRFP3710PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFP3710PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 5.30 (.209) 4.70 (.185) NOTES: 5.50 (.217) 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 3 -C- 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 4.30 (.