Datasheet

03/03/08
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
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IRFP4110PbF
HEXFET
®
Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
V
DSS
100V
R
DS
(
on
)
typ.
3.7m
:
max.
4.5m
:
I
D
(
Silicon Limited
)
180A
c
I
D
(
Packa
g
e Limited
)
120A
S
D
G
TO-247AC
GDS
Gate Drain Source
S
D
G
D
PD - 97311
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
k
––– 0.402
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.24 ––– °C/W
R
θ
JA
Junction-to-Ambient
j
––– 40
300
Max.
180
c
130
c
670
120
190
108
37
370
5.3
-55 to + 175
± 20
2.5
10lb
x
in (1.1N
x
m)