Datasheet

IRFZ34NPbF
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 0.040
I
D
= 29A
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case –––– –––– 2.2
R
θCS
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
R
θJA
Junction-to-Ambient –––– –––– 62
S
D
G
11/3/03
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 29
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 20 A
I
DM
Pulsed Drain Current 100
P
D
@T
C
= 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 65 mJ
I
AR
Avalanche Current 16 A
E
AR
Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
TO-220AB
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