Datasheet

IRFZ44NPbF
HEXFET
®
Power MOSFET
10/31/03
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.5
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
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V
DSS
= 55V
R
DS(on)
= 17.5m
I
D
= 49A
S
D
G
TO-220AB
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
PD - 94787
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 49
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 35 A
I
DM
Pulsed Drain Current 160
P
D
@T
C
= 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 25 A
E
AR
Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

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