Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsMOSFET N, 60 V 55 A 115 W TO-220AB

IRFZ44VPbF

HEXFET

Power MOSFET

09/30/10

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 55

@ T

= 100°C Continuous Drain Current, V

@ 10V 39 A

Pulsed Drain Current  220

= 25°C Power Dissipation 115 W

Linear Derating Factor 0.77 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 115 mJ

Avalanche Current 55 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  4.5 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.3

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

DSS

= 60V

DS(on)

= 16.5mΩ

= 55A

TO-220AB

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

Description

l Lead-Free

PD - 94826A

Summary of content (8 pages)

PAGE 1
PD - 94826A IRFZ44VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 16.5mΩ G ID = 55A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFZ44VPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 ––– ––– 2.
PAGE 3
IRFZ44VPBF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 ° C 10 V DS= 25V 20µs PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2.
PAGE 4
IRFZ44VPbF 20 VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 4000 Crss = Cgd Coss = Cds + Cgd 3000 2000 Ciss 1000 Coss ID = 51A 16 12 8 4 Crss 0 1 10 0 100 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 40 80 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C ID , Drain Current (A) 100 10us 100 TJ = 25 ° C 10 1 0.1 0.2 60 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRFZ44VPBF VGS 50 ID , Drain Current (A) RD V DS 60 D.U.T. RG + V DD - 40 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 0.01 0.
PAGE 6
15V L VDS DRIVER D.U.T RG + - VDD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFZ44VPbF 250 ID 21A 36A BOTTOM 51A TOP 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T.
PAGE 7
IRFZ44VPBF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFZ44VPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S EMB L E D ON WW 19, 2000 IN T HE AS S EMB L Y L INE "C" Note: "P" in as s embly line pos ition indicates "L ead - F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MBL Y L OT CODE PART NU MB ER DAT E CODE YE AR 0 = 2000 WE E K 19 L INE C Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.