Datasheet

Parameter Max. Units
V
CES
Collector-to-Emitter Breakdown Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 13
I
C
@ T
C
= 100°C Continuous Collector Current 6.5 A
I
CM
Pulsed Collector Current  52
I
LM
Clamped Inductive Load Current  52
V
GE
Gate-to-Emitter Voltage ± 20 V
E
ARV
Reverse Voltage Avalanche Energy  200 mJ
P
D
@ T
C
= 25°C Maximum Power Dissipation 60
P
D
@ T
C
= 100°C Maximum Power Dissipation 24
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
IRG4BC20WPbF
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
 Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
 Industry-benchmark switching losses improve
efficiency of all power supply topologies
 50% reduction of Eoff parameter
 Low IGBT conduction losses
 Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
 Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
 Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
 Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Benefits
V
CES
= 600V
V
CE(on) typ.
= 2.16V
@V
GE
= 15V, I
C
= 6.5A
Absolute Maximum Ratings
W
Parameter Typ. Max. Units
R
θJC
Junction-to-Case  2.1
R
θCS
Case-to-Sink, Flat, Greased Surface 0.5  °C/W
R
θJA
Junction-to-Ambient, typical socket mount  80
Wt Weight 2.0 (0.07)  g (oz)
Thermal Resistance
01/25/10
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 Lead-Free
TO-220AB
PD-95640A