Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-220AB 600 V 60 A

Parameter Max. Units

CES

Collector-to-Emitter Breakdown Voltage 600 V

@ T

= 25°C Continuous Collector Current 60

@ T

= 100°C Continuous Collector Current 31 A

Pulsed Collector Current Q 120

Clamped Inductive Load Current R 120

Gate-to-Emitter Voltage ± 20 V

ARV

Reverse Voltage Avalanche Energy S 15 mJ

@ T

= 25°C Maximum Power Dissipation 160

@ T

= 100°C Maximum Power Dissipation 65

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4BC40SPbF

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 95175

n-channel

Features

• Standard: optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• Industry standard TO-220AB package

• Lead-Free

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

Benefits

CES

= 600V

CE(on) typ.

= 1.32V

= 15V, I

= 31A

04/23/04

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.77

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient, typical socket mount ––– 80

Wt Weight 2.0 (0.07) ––– g (oz)

Thermal Resistance

-22

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Summary of content (8 pages)

PAGE 1
PD - 95175 IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free VCES = 600V VCE(on) typ. = 1.
PAGE 2
IRG4BC40SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — 1.32 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.68 — 1.32 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.
PAGE 3
IRG4BC40SPbF 70 F o r b o th : 60 50 Load Current ( A ) T ria n g u la r w a ve : D uty c yc le: 50% T J = 125°C T s ink = 90°C G ate driv e as spec ified I C la m p vo l ta g e : 8 0 % o f ra te d P o w e r D is s ip a tio n = 2 8 W 40 S q u a re wave : 6 0 % o f ra te d vo l ta g e 30 I 20 Id e a l d io de s 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs.
PAGE 4
IRG4BC40SPbF 2.0 V G E = 15V V C E , C ollec to r-to -E m itte r V oltage (V ) Maximum DC Collector Current (A) 60 50 40 30 20 10 A 0 25 50 75 100 125 VGE = 15V 8 0 µ s P U L S E W ID T H I C = 62A 1.5 I C = 31A I C = 16A A 1.0 -60 150 TC , Case Temperature (°C) -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n T e m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs.
PAGE 5
IRG4BC40SPbF V GE = C ie s = C re s = C oes = 20 0V , f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C g c V GE , G a te -to -E m itter V oltage (V ) C , C a pa cita nce (pF ) 4000 3000 C ie s 2000 C o es 1000 C res A 0 1 10 VC E = 4 0 0 V IC = 31A 16 12 8 4 A 0 100 0 20 V C E , C ollector-to-Em itter Vo ltag e (V) 7.7 100 = 480V = 15V = 25 °C = 31A 7.6 7.5 7.4 A 7.3 0 10 20 30 40 50 60 R G , G ate R esistan ce (Ω) Fig. 9 - Typical Switching Losses vs.
PAGE 6
IRG4BC40SPbF RG TJ V CC V GE = = = = 1000 10 Ω 150°C 480V 15V I C , C ollecto r-to -Em itter Cu rrent (A) Total Switching Losses (mJ) 30 20 10 A 0 0 10 20 30 40 50 60 I C , Collector-to-Emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 70 VGGE E= 2 0V T J = 12 5 °C 100 S A FE O P E R A TIN G A R E A 10 1 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA www.irf.
PAGE 7
IRG4BC40SPbF L D .U .T. VC * 50V RL = 0 - 480V 1000V Q 480V 4 X IC@25°C 480µF 960V R * Driver sam e type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V pow er supply, pulse w idth and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig.
PAGE 8
IRG4BC40SPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.1 1 3 ) 2.62 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) - B - 3.78 (.14 9) 3.54 (.13 9) 4.6 9 (.1 8 5) 4.2 0 (.1 6 5) - A - 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 6.4 7 (.2 55 ) 6.1 0 (.2 40 ) 4 1 5 .24 (.60 0 ) 1 4 .84 (.58 4 ) LEA D A S SIG NM E NTS 1.1 5 (.04 5) M IN 1 2 3 14 .09 (.5 55 ) 13 .47 (.5 30 ) 1 .4 0 (.05 5 ) 1 .1 5 (.