Datasheet

IRG4PC40UDPbF

PD - 94937

www.irf.com 1

1/12/04

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz

in hard switching, >200 kHz in resonant mode

• Generation 4 IGBT design provides tighter parameter

distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFRED

ultrafast, ultra-

soft recovery anti-parallel diodes for use in bridge

configurations

• Industry standard TO-247AC package

• Lead-Free

Benefits

• Generation -4 IGBTs offer highest efficiencies available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBTs.

Minimized recovery characteristics require less/no snubbing

• Designed to be a drop-in replacement for equivalent

industry-standard Generation 3 IR IGBTs

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PD - 94937 IRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free Benefits • Generation
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IRG4PC40UDPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 5.30 (.209) 4.70 (.185) NOTES: 5.50 (.217) 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 3 -C- 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 4.
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Note: For the most current drawings please refer to the IR website at: http://www.irf.