Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-247AC 600 V 40 A

Parameter Max. Units

CES

Collector-to-Emitter Breakdown Voltage 600 V

@ T

= 25°C Continuous Collector Current 40

@ T

= 100°C Continuous Collector Current 20 A

Pulsed Collector Current Q 160

Clamped Inductive Load Current R 160

Gate-to-Emitter Voltage ± 20 V

ARV

Reverse Voltage Avalanche Energy S 160 mJ

@ T

= 25°C Maximum Power Dissipation 160

@ T

= 100°C Maximum Power Dissipation 65

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4PC40WPbF

INSULATED GATE BIPOLAR TRANSISTOR

PD -95183

n-channel

TO-247AC

Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and constructionoffers

tighter parameters distribution, exceptional reliability

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

Benefits

CES

= 600V

CE(on) typ.

= 2.05V

= 15V, I

= 20A

04/23/04

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.77

θCS

Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W

θJA

Junction-to-Ambient, typical socket mount ––– 40

Wt Weight 6 (0.21) ––– g (oz)

Thermal Resistance

Absolute Maximum Ratings

www.irf.com 1

• Lead-Free

Summary of content (8 pages)

PAGE 1
PD -95183 IRG4PC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and constructionoffers tighter parameters distribution, exceptional reliability • Lead-Free C VCES = 600V VCE(on) typ. = 2.
PAGE 2
IRG4PC40WPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.44 — 2.05 Collector-to-Emitter Saturation Voltage — 2.36 VCE(ON) — 1.90 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff.
PAGE 3
IRG4PC40WPbF 50 F o r b o th : 40 Load Current ( A ) Tria n g u la r w a ve : D u ty c y c le : 5 0 % TJ = 12 5° C T s in k = 9 0 °C G at e d riv e as sp ec ifie d P o w e r D is s ip a tio n = 2 8 W C la m p vo l ta g e : 8 0 % o f ra te d 30 S q u a re w ave : 6 0 % o f ra t e d v o lta g e 20 10 Id e al d io d e s A 0 0.1 1 10 100 1000 f, Frequency (kH z) Fig. 1 - Typical Load Current vs.
PAGE 4
IRG4PC40WPbF 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature ( °C) V = 15V 80 us PULSE WIDTH GE IC = 40 A 2.5 IC = 20 A 2.0 IC = 10 A 1.5 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.
PAGE 5
IRG4PC40WPbF C, Capacitance (pF) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 Cies 2000 Coes 1000 0 C res 1 10 20 VGE, Gate-to-Emitter Voltage (V) 4000 12 8 4 VCE , Collector-to-Emitter Voltage (V) 20 40 60 80 100 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 V CC = 480V V GE = 15V 0.9 TJ = 25 °C I C = 20A Total Switching Losses (mJ) Total Switching Losses (mJ) 0 QG , Total Gate Charge (nC) Fig.
PAGE 6
IRG4PC40WPbF 1.5 1000 RG TJ VCC VGE Ω =10 10Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 2.0 1.0 SAFE OPERATING AREA 5 15 25 35 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125 oC 100 0.5 0.0 45 10 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.
PAGE 7
IRG4PC40WPbF L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V Q 480V 4 X IC@25°C 480µF 960V R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T.
PAGE 8
IRG4PC40WPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPLE : T HIS IS AN IRFPE30 WIT H AS S E MB LY LOT CODE 5657 AS S E MB LE D ON WW 35, 2000 IN T HE AS S E MB LY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT E RNAT IONAL RE CT IFIE R LOGO AS S E MB LY LOT CODE PART NUMB E R IRF PE 30 56 035H 57 DAT E CODE YE AR 0 = 2000 WE E K 35 LINE H Data and specifications subject to change without notice.