Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-247AC 1200 V 41 A

Parameter Max. Units

CES

Collector-to-Emitter Breakdown Voltage 1200 V

@ T

= 25°C Continuous Collector Current 41

@ T

= 100°C Continuous Collector Current 21 A

Pulsed Collector Current Q 82

Clamped Inductive Load Current R 82

Gate-to-Emitter Voltage ± 20 V

ARV

Reverse Voltage Avalanche Energy S 270 mJ

@ T

= 25°C Maximum Power Dissipation 160

@ T

= 100°C Maximum Power Dissipation 65

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4PH40UPbF

Ultra Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 95187

n-channel

TO-247AC

Features

Benefits

CES

= 1200V

CE(on) typ.

= 2.43V

= 15V, I

= 21A

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.77

θCS

Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W

θJA

Junction-to-Ambient, typical socket mount ––– 40

Wt Weight 6 (0.21) ––– g (oz)

Thermal Resistance

Absolute Maximum Ratings

04/26/04

• UltraFast: Optimized for high operating

frequencies up to 40 kHz in hard switching,

>200 kHz in resonant mode

• New IGBT design provides tighter

parameter distribution and higher efficiency than

previous generations

• Optimized for power conversion; SMPS, UPS

and welding

• Industry standard TO-247AC package

• Higher switching frequency capability than

competitive IGBTs

• Highest efficiency available

• Much lower conduction losses than MOSFETs

• More efficient than short circuit rated IGBTs

www.irf.com 1

• Lead-Free

Summary of content (9 pages)

PAGE 1
PD - 95187 IRG4PH40UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package • Lead-Free VCES = 1200V VCE(on) typ. = 2.
PAGE 2
IRG4PH40UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.43 — V/°C VGE = 0V, IC = 1.0mA — 2.43 3.1 IC = 21A VGE = 15V Collector-to-Emitter Saturation Voltage — 2.97 — IC = 41A See Fig.
PAGE 3
IRG4PH40UPbF 50 F o r b o th : T ria n g u la r w a ve : D uty c yc le: 50% T J = 125°C T s ink = 90°C G ate driv e as spec ified 40 I Load Current ( A ) P o w e r D is s ip a tio n = 3 5 W 30 C la m p vo l ta g e : 8 0 % o f ra te d S q u a re wave : 6 0 % o f ra te d vo l ta g e 20 I 10 Id e a l d io de s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs.
PAGE 4
IRG4PH40UPbF 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 V = 15V 80 us PULSE WIDTH GE I C = 42 A 3.0 I C = 21 A I C =10.5 A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 , Junction Temperature TTJ J, Junction Temperature ( °C( °)C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs.
PAGE 5
IRG4PH40UPbF C, Capacitance (pF) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 Cies 2000 Coes 1000 Cres 0 1 10 20 VGE , Gate-to-Emitter Voltage (V) 4000 12 8 4 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 100 4.6 4.4 4.2 0 10 20 30 40 RGRG , Gate , GateResistance Resistance(Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 20 40 60 80 100 Fig.
PAGE 6
IRG4PH40UPbF Total Switching Losses (mJ) 1000 RG TJ VCC 20.0 VGE = 10 Ohm Ω = 150 ° C = 960V = 15V I C , Collector-to-Emitter Current (A) 25.0 VGE = 20V T J = 125 oC 100 15.0 10.0 5.0 0.0 SAFE OPERATING AREA 0 10 20 30 40 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 10 50 1 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.
PAGE 7
IRG4PH40UPbF L D .U .T. VC * 50V RL = 0 - 960V 1 00 0V Q 960V 4 X I C@25°C 480µF 960V R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T.
PAGE 8
IRG4PH40UPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St.
PAGE 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.