Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-247 1200 V 60 A

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

Benefits

Absolute Maximum Ratings

Thermal Resistance

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ––– ––– 0.42

θJC

Junction-to-Case - Diode ––– ––– 0.83 °C/W

θCS

Case-to-Sink, flat, greased surface ––– 0.24 –––

θJA

Junction-to-Ambient, typical socket mount ––– ––– 40

Weight ––– 6 (0.21) ––– g (oz)

Transient Thermal Impedance Junction-to-Case (Fig.24)

Motor Control Co-Pack IGBT

TO-247AD

N-channel

Parameter Max. Units

CES

Collector-to-Emitter Breakdown Voltage 1200 V

@ T

= 25°C Continuous Collector Current (Fig.1) 60

@ T

= 100°C Continuous Collector Current (Fig.1) 30

Pulsed Collector Current (Fig.3, Fig. CT.5) 120

Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A

@ T

= 100°C Diode Continuous Forward Current 30

Diode Maximum Forward Current 120

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation (Fig.2) 300

@ T

= 100°C Maximum Power Dissipation (Fig.2) 120

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)

°C

Mounting Torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

• Low V

(on) Non Punch Through (NPT) Technology

• Low Diode V

(1.76V Typical @ 25A & 25°C)

• 10

μs Short Circuit Capability

• Square RBSOA

• Ultrasoft Diode Recovery Characteristics

• Positive V

(on) Temperature Coefficient

• Extended Lead TO-247AD Package

• Lead-Free

• Benchmark Efficiency for Motor Control Applications

• Rugged Transient Performance

• Low EMI

• Significantly Less Snubber Required

• Excellent Current Sharing in Parallel Operation

• Longer leads for Easier Mounting

CES

= 1200V

CE(on) typ.

= 2.28V

= 15V, I

= 25A, 25°C

IRGP30B120KD-EP

Form Quantity

IRGP30B120KD-EP TO-247AD Tube 25 IRGP30B120KD-EP

Package Type

Standard Pack

Orderable Part NumberBase Part Number

Summary of content (13 pages)

PAGE 1
IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE(on) Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C) 10 μs Short Circuit Capability Square RBSOA Ultrasoft Diode Recovery Characteristics Positive VCE(on) Temperature Coefficient Extended Lead TO-247AD Package Lead-Free VCE(on) typ. = 2.
PAGE 2
IRGP30B120KD-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage Min. 1200 ΔV(BR)CES / ΔTj Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation VCE(on) Voltage VGE(th) Gate Threshold Voltage ΔVGE(th) / ΔTj Temperature Coeff. of Threshold Voltage gfe Forward Transconductance ICES Zero Gate Voltage Collector Current VFM IGES 4.0 14.8 Typ. +1.2 2.28 2.46 3.43 2.74 2.98 5.0 - 1.2 16.9 325 1.76 1.
PAGE 3
IRGP30B120KD-EP Fig.1 - Maximum DC Collector Current vs. Case Temperature Fig.2 - Power Dissipation vs. Case Temperature 70 320 60 280 240 50 200 (W) tot C (A) 40 P I 30 20 160 120 80 10 40 0 0 0 40 80 120 160 0 40 120 160 T C (°C) T C (°C) Fig.3 - Forward SOA T C =25°C; Tj < 150°C 1000 80 Fig.4 - Reverse Bias SOA Tj = 150°C, V GE = 15V 1000 PULSED 2μs 100 10μ s 100 (A) I 1ms I C 10 C (A) 100μ s 10 1 10ms DC 0.
PAGE 4
IRGP30B120KD-EP Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300μs Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300μs 60 55 V GE = 15V 50 V GE = 12V V GE = 15V 50 V GE = 12V 45 V GE = 10V 40 40 V GE = 8V 35 35 (A) V GE = 8V 30 C 30 C 25 I I V GE = 18V 55 V GE = 10V 45 (A) 60 V GE = 18V 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 V CE (V) 5 0 6 Fig.
PAGE 5
IRGP30B120KD-EP Fig.10 - Typical V CE vs V GE Tj= 25°C 20 20 18 18 16 16 14 14 12 12 10 V CE ( V ) V CE (V) Fig.9 - Typical V CE vs V GE Tj= -40°C I CE =10A I CE =25A I CE =50A 8 10 8 6 6 4 4 2 2 0 0 6 8 10 12 14 V GE (V) 16 18 20 250 18 225 16 200 14 175 12 150 4 50 2 25 0 0 10 12 14 V GE (V) 16 18 20 18 Tj=25°C Tj=125°C C 75 8 16 100 6 6 12 14 V GE (V) 125 I CE =10A I CE =25A I CE =50A 8 10 (A) 20 10 8 I V CE ( V ) 6 Fig.
PAGE 6
IRGP30B120KD-EP Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200μH; V CE =600V; Rg=22 Ω ; V GE =15V Fig.14 - Typical Switching Time vs Ic Tj=125°C; L=200μH; V CE =600V; Rg=22 Ω ;V GE =15V 8000 1000 Eon 7000 tdoff Eoff 5000 t (nS) Energy (μJ) 6000 4000 tf tr 100 3000 tdon 2000 1000 0 10 0 10 20 30 I C (A) 40 50 0 60 Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200μH; V CE =600V; I CE =25A; V GE =15V 3500 10 20 30 I C (A) 40 50 60 Fig.
PAGE 7
IRGP30B120KD-EP Fig.17 - Typical Diode I RR vs I F Tj=125°C 45 40 40 35 35 Rg=5 Ω 25 30 25 I RR ( A ) 30 IRR ( A ) 45 Fig.18 - Typical Diode I RR vs Rg Tj=125°C; I F =25A Rg=10 Ω 20 20 Rg=22 Ω 15 15 Rg=51 Ω 10 10 5 5 0 0 0 10 20 30 I F (A) 40 50 0 60 5 Fig.
PAGE 8
IRGP30B120KD-EP Fig.21 - Typ. Diode E rec vs. I F Tj=125°C 2400 5Ω 2200 10 Ω 22 Ω Energy (uJ) 2000 51 Ω 1800 1600 1400 1200 1000 800 0 10 20 30 I F (A) 40 50 60 Fig.23 - Typ. Gate Charge vs. V GE I C =25A; L=600μH Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz 16 10000 600V 14 C ies 800V 1000 10 V GE ( V ) CapacItance (pF) 12 C oes 8 6 100 4 C res 2 0 10 0 20 40 60 80 100 0 V CE (V) 8 www.irf.
PAGE 9
IRGP30B120KD-EP Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case θ 10 1 D =0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C SINGLE PULSE 0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , Rectangular Pulse Duration (sec) 9 www.irf.
PAGE 10
IRGP30B120KD-EP Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L VCC DUT 0 80 V DUT 1000V Rg 1K Fig. CT.4 - Switching Loss Circuit Fig. CT.3 - S.C. SOA Circuit diode clamp / DUT Driver D C 900V L - 5V DUT / DRIVER DUT VCC Rg Fig. CT.5 - Resistive Load Circuit R= DUT VCC ICM VCC Rg 10 www.irf.
PAGE 11
IRGP30B120KD-EP Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 800 40 900 45 700 35 800 40 600 30 700 35 TEST CURRENT 90% ICE 500 25 400 20 600 30 15 200 10 25 90% test current ICE ( A ) tf 300 V CE ( V ) I CE ( A ) V CE (V) 500 400 20 tr 300 5% VCE 100 15 10% test current 200 5 5% ICE 0 0 10 5% VCE 100 5 0 0 Eoff Loss -100 -0.5 Eon Loss -5 0.0 0.5 1.0 1.5 2.0 2.
PAGE 12
IRGP30B120KD-EP TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) TO-247AD Part Marking Information EXAMPLE: THIS IS AN IRGP30B120KD-E WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" INTERNATIONAL RECTIF IER LOGO Note: "P" in as s embly line pos ition indicates "Lead-Free" PART NUMBER 56 035H 57 AS SEMBLY LOT CODE DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Note: For the most current drawing please refer to IR website at: http://www.irf.
PAGE 13
IRGP30B120KD-EP † Qualification information Industrial Qualification level (per JEDE C JES D47F Moisture Sensitivity Level †† guidelines) N/A TO-247AD Yes RoHS compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Revision History Date Comment 5/29/2014 • Updated data sheet with IR corporate template. • Updated package outline on page 12.