Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-247 600 V 75 A

WARP2 SERIES IGBT WITH

ULTRAFAST SOFT RECOVERY DIODE

IRGP50B60PD1PbF

7/25/08

Features

• NPT Technology, Positive Temperature Coefficient

• Lower V

(SAT)

• Lower Parasitic Capacitances

• Minimal Tail Current

• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

• Tighter Distribution of Parameters

• Higher Reliability

Benefits

• Parallel Operation for Higher Current Applications

• Lower Conduction Losses and Switching Losses

• Higher Switching Frequency up to 150kHz

n-channel

CES

= 600V

CE(on)

typ. = 2.00V

@ V

= 15V

= 33A

Equivalent MOSFET

Parameters

CE(on)

typ. = 61mΩ

(FET equivalent) = 50A

Applications

• Telecom and Server SMPS

• PFC and ZVS SMPS Circuits

• Uninterruptable Power Supplies

• Consumer Electronics Power Supplies

TO-247AC

SMPS IGBT

PD - 95330A

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C

Continuous Collector Current 75

@ T

= 100°C

Continuous Collector Current 45

Pulse Collector Current (Ref. Fig. C.T.4) 150

Clamped Inductive Load Current

150 A

@ T

= 25°C

Diode Continous Forward Current 40

@ T

= 100°C

Diode Continous Forward Current 15

FRM

Maximum Repetitive Forward Current

Gate-to-Emitter Voltage ±20 V

@ T

= 25°C

Maximum Power Dissipation 390 W

@ T

= 100°C

Maximum Power Dissipation 156

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. Typ. Max. Units

(IGBT)

Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.32 °C/W

θJC

(Diode)

Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

θJA

Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

Weight ––– 6.0 (0.21) ––– g (oz)

• Lead-Free

www.irf.com 1

Summary of content (10 pages)

PAGE 1
SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free E Features • • • • • • • Equivalent MOSFET Parameters RCE(on) typ.
PAGE 2
IRGP50B60PD1PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage Parameter 600 — — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.31 — RG Internal Gate Resistance — 1.7 — — 2.00 2.35 — 2.45 2.85 — 2.60 2.95 — 3.20 3.60 VCE(on) Collector-to-Emitter Saturation Voltage Max. Units V Conditions Ref.
PAGE 3
IRGP50B60PD1PbF 450 80 400 70 350 60 300 Ptot (W) 90 IC (A) 50 40 250 200 30 150 20 100 10 50 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 T C (°C) 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 200 1000 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 180 160 140 IC A) ICE (A) 100 10 120 100 80 60 40 20 0 1 10 100 0 1000 1 2 3 4 Fig.
PAGE 4
IRGP50B60PD1PbF 900 10 800 T J = 25°C 9 700 T J = 125°C 8 7 VCE (V) ICE (A) 600 500 400 300 ICE = 15A ICE = 33A 6 5 ICE = 50A 4 200 TJ = 125°C 3 100 T J = 25°C 2 0 1 0 5 10 15 20 0 5 10 VGE (V) 15 20 VGE (V) Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs Fig. 8 - Typical VCE vs.
PAGE 5
IRGP50B60PD1PbF 1000 1000 900 EON 700 EOFF 600 tdOFF Swiching Time (ns) Energy (µJ) 800 500 100 td ON tF 400 tR 10 300 0 5 10 15 20 0 25 5 10 15 20 25 RG ( Ω) RG ( Ω) Fig. 13 - Typ. Energy Loss vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) Fig. 14 - Typ. Switching Time vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.
PAGE 6
IRGP50B60PD1PbF 100 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 I IRRM - (A) t rr - (ns) I F = 30A I F = 30A 60 I F = 15A IF = 15A 10 I F = 5.0A 40 I F = 5.0A 20 100 di f /dt - (A/µs) 1 100 1000 Fig. 19 - Typical Reverse Recovery vs. dif/dt 1000 di f /dt - (A/µs) Fig. 20 - Typical Recovery Current vs. dif/dt 800 1000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) 600 Q RR - (nC) IF = 30A 400 I F = 15A IF = 5.
PAGE 7
IRGP50B60PD1PbF Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 R1 R1 0.05 0.01 τJ 0.01 0.02 τJ τ1 τC τ2 τ1 τ Ri (°C/W) τi (sec) 0.157 0.000346 0.163 τ2 4.28 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 23.
PAGE 8
IRGP50B60PD1PbF L L VCC DUT 0 80 V DUT 480V Rg 1K Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) L PFC diode R= DUT / DRIVER VCC DUT Rg VCC ICM VCC Rg Fig.C.T.4 - Resistive Load Circuit Fig.C.T.3 - Switching Loss Circuit REVERSE RECOVERY CIRCUIT VR = 200V 0.01 Ω L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit 8 www.irf.
PAGE 9
IRGP50B60PD1PbF 550 50 500 90 400 80 90% ICE 350 450 40 90% ICE 300 30 250 200 20 5% V CE 150 100 -100 -0.20 Eof f 0.00 60 40 30 5% V CE 100 10% ICE 20 10 0 -10 0.40 0.20 70 50 150 0 -50 TEST CURRENT 200 50 0 tr 250 10 5% ICE 50 300 V CE (V) tf 350 ICE (A) 400 VCE (V) 450 ICE (A) 60 600 Eon Loss -50 -0.10 0.00 Time (µs) 0.10 0 -10 0.20 Time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25°C using Fig. CT.3 Fig. WF2 - Typ.
PAGE 10
IRGP50B60PD1PbF TO-247AC Package Outline Dimensions are shown in milimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6 ,6 $1 ,5)3( :,7+ $66(0%/< /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( + 1RWH 3 LQ DVVHPEO\ OLQH SRVLWLRQ LQGLFDWHV /HDG )UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57 180%(5 ,5)3( + $66(0%/< /27 &2'( '$7( &2'( <($5 :((. /,1( + TO-247AC package is not recommended for Surface Mount Application.