Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGS4062DPbF
IRGSL4062DPbF
1 www.irf.com
12/07/09
E
G
n-channel
C
V
CES
= 600V
I
C
= 24A, T
C
= 100°C
t
SC
≥ 5µs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.65V
Features
• Low V
CE (ON)
Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (I
LM
)
• Positive V
CE (ON)
Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
GC E
Gate Collector Emitter
PD - 97355B
E
C
G
C
C
E
G
D
2
Pak
IRGS4062DPbF
TO-262
IRGSL4062DPbF
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current 48
I
C
@ T
C
= 100°C
Continuous Collector Current 24
I
CM
Pulse Collector Current 96
I
LM
Clamped Inductive Load Current
96 A
I
F
@ T
C
= 25°C
Diode Continous Forward Current 48
I
F
@ T
C
= 100°C
Diode Continous Forward Current 24
I
FM
Diode Maximum Forward Current
96
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation 250 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 125
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.60
R
θ
JC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.53 °C/W
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––