Datasheet

www.irf.com 1
07/03/09
IRLB3813PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
GDS
Gate Drain Source
PD - 97407
TO-220AB
S
D
G
D
Applications
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l Optimized for UPS/Inverter Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Power Tools
V
DSS
R
DS(on)
max
Qg (typ.)
30V
1.95m
Ω
@V
GS
= 10V
57nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
C
= 100°C Maximum Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 0.64
R
θCS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θJA
Junction-to-Ambient
––– 62
V
°C
°C/W
W
A
1.6
120
10lb
in (1.1N m)
-55 to + 175
300 (1.6mm from case)
230
Max.
260
1050
± 20
30
190