Datasheet

© 2006 IXYS All rights reserved
1 - 3
0639
CS 45
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
= 800-1600 V
I
T(RMS)
= 75 A
I
T(AV)M
= 48 A
Phase Control Thyristor
Features
• Thyristor for line frequency
• International standard package
JEDEC TO-247
• Planar passivated chip
• Long-term stability of blocking
currents and voltages
• Version AR isolated and
UL registered E153432
• Epoxy meets UL 94V-0
Applications
• Motor control
• Power converter
• AC power controller
• Switch-mode and resonant mode
power supplies
• Light and temperature control
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space and weight savings
• Simple mounting
• Improved temperature and power
cycling
Symbol Conditions Maximum Ratings
I
TRMS
I
T(AV)M
T
VJ
= T
VJM
T
C
= 75°C, 180° sine
75
48
A
A
I
TSM
T
VJ
= 45°C t = 10 ms (50 Hz), sine
V
R
= 0 V t = 8.3 ms (60 Hz), sine
520
560
A
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
V
R
= 0 t = 8.3 ms (60 Hz), sine
460
500
A
A
I
2
t
T
VJ
= 45°C t = 10 ms (50 Hz), sine
V
R
= 0 V t = 8.3 ms (60 Hz), sine
1350
1300
A
2
s
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
V
R
= 0 V t = 8.3 ms (60 Hz), sine
1050
1030
A
2
s
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
f = 50 Hz; t
p
= 200 µs
repetitive, I
T
= 40 A 150 A/µs
V
D
=
2
/
3
V
DRM
I
G
= 0.3 A
di
G
/dt = 0.3 A/µs
non repetitive, I
T
= I
T(AV)M
500 A/µs
(dv/dt)
cr
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
R
GK
= ∞; method 1 (linear voltage rise)
1000 V/µs
P
GM
P
GAV
T
VJ
= T
VJM
; t
p
= 30 µs
I
T
= I
T(AV)M
; t
p
= 300 µs
10
5
0.5
W
W
W
V
RGM
10 V
T
VJ
T
VJM
T
stg
-40 ... +140
140
-40 ... 125
°C
°C
°C
M
d
Version io1: mounting torque M3 0.8...1.2 Nm
F
C
Version io1R: mounting force with clip 20...120 N
V
ISOL
*
50/60 Hz, RMS, t = 1 minute, leads-to-tab
2500 V~
Weight
typ. 6 g
* Version io1R only Data according to IEC 60747
V
RSM
V
DSM
V
V
RRM
V
DRM
V Type
900 800 CS 45-08 io1
1300 1200 CS 45-12 io1
1700 1600 CS 45-16 io1 CS 45-16 io1R
A
G
C
ISOPLUS247
TM
Version io1R
A = Anode, C = Cathode, G = Gate
C
A
TO-247 AD
Version io1
G
C
A
G
h
h
A (TAB)
Isolated
back surface