Datasheet
© 2006 IXYS All rights reserved
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Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions
0647
DH 40-18A
I
FAVM
=40A
V
RRM
= 1800 V
t
rr
= 100 ns
Features
• Small temperature dependence for
- forward voltage drop
- reverse recovery current
• Optimized for
- dynamic avalanche ruggedness
- low loss performance
• Exceptionally soft recovery
• Low reverse recovery current characteristic
• Soft recovery current without tail
• Optimized for high frequency hard switching
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Induction heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Symbol Conditions Maximum Ratings
I
FRMS
T
VJ
= T
VJM
70 A
I
FAVM
T
C
= 85°C; rectangular, d = 0.5 40 A
I
FRM
t
P
< 10 µs; rep. rating, pulse width limited by T
VJM
500 A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine 350 A
E
AS
T
VJ
= 25°C; non-repetitive tbd mJ
I
AS
= tbd A; L = 100 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive tbd A
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
T
C
= 25°C 280 W
M
d
Mounting torque 0.8...1.2 Nm
Weight 6g
Fast Recovery Diode
SONIC-FRD
TM
series
V
RSM
V
RRM
Type
V V
1800 1800 DH 40-18A
A
C
Data according to IEC 60747
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D* 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Dimensions
Symbol Conditions Characteristic Values
typ. max.
I
R
T
VJ
= 25°C V
R
= V
RRM
50 100 µA
T
VJ
= 125°C V
R
= V
RRM
1.2 mA
V
F
I
F
= 40 A; T
VJ
= 125°C 2.4 V
T
VJ
= 25°C 2.4 2.7 V
V
T0
For power-loss calculations only 2.0 V
r
T
T
VJ
= T
VJM
18 mΩ
R
thJC
0.45 K/W
R
thCH
0.25 K/W
t
rr
I
F
= 60 A; -di/dt = 400 A/µs; V
R
= 1200 V; 100 ns
I
RM
T
VJ
= 25°C 30 A
S t
b
/t
a
tbd
RSF di
F
/dt / di
R
/dt tbd
t
rr
I
F
= 60 A; -di/dt = 400 A/µs; V
R
= 1200 V; 250 ns
I
RM
T
VJ
= 125°C 40 A
S t
b
/t
a
tbd
RSF di
F
/dt / di
R
/dt tbd
TO-247 AD
C
C
A
A = Anode, C = Cathode