Datasheet
DH60-18A
0 400 800 1200 1600
0
200
400
600
800
1000
1200
1400
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
30
60
90
120
150
0.0
0.5
1.0
1.5
2.0
2.5
0 400 800 1200 1600
0
20
40
60
80
100
100 1000
0
10
20
30
40
0123
0
20
40
60
80
100
120
140
V
FR
t
fr
I
RM
Q
r
I
F
[A]
V
F
[V]
Q
r
[nC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs]
K
f
T
VJ
[°C]
t
rr
[ns]
-di
F
/dt [A/µs]
di
F
/dt [A/µs]
V
FR
[V]
t [s]
Z
thJC
[K/W]
Fig. 1 Typ. rward current
I
F
versus V
F
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
& typ. forward recovery
time t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
t
fr
[µs]
T
VJ
=100°C
V
R
= 1200 V
I
F
= 60 A
T
VJ
= 100°C
V
R
= 1200 V
I
F
=60 A
T
VJ
=100°C
V
R
=1200 V
I
F
=60 A
T
VJ
=100°C
V
R
=1200 V
T
VJ
= 125°C
T
VJ
=25°C
iR
i
i
1 0.021 0.0093
2 0.11 0.038
30.1690.274
IXYS reserves the right to change limits, conditions and dimensions.
©
20110908b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved