Datasheet

DPG 60 C 300 HB
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ. max.
I
FSM
I
R
A
V
300
I
FAV
A
V
F
1.34
R
thJC
0.95 K/W
V
R
=
1 2 3
min.
30
t = 10 ms
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
V
RRM
V300
1T
VJ
V°C=
T
VJ
°C=mA0.1
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 135°C
rectangular, d = 0.5
P
tot
160 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
FAV
=
=
300
30
30
T
VJ
=45°C
DPG 60 C 300 HB
V
A
300
V300
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
1.63
T
VJ
°C=25
C
J
40 pF
j
unction capacitance
V= V;150 T
150
V
F0
V0.70T
VJ
= 175°C
r
F
10.5
Ω
f = 1 MHz = °C25
m
V1.06T
VJ
=°C
I
F
=A
V
30
150
1.39
I
F
=A60
I
F
=A60
2x
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
3A
T
VJ
=°C
reverse recovery time
Atbd
35
tbd
ns
(50 Hz), sine
t
rr
= 35 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
R
VJ
E
AS
0.5 mJ
I
AS
=A;L =µH
I
AR
A
V
A
=
0.9
f = 10 kHz1.5·V
R
typ.;
9
100
non-repetitive avalanche energy
repetitive avalanche current
T= °C25
VJ
I
RM
max. reverse recovery current
I
F
=A;30
25
T= °C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=
V
100
T
VJ
=°C25
T= °C
VJ
µA
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified