Datasheet

© 2000 IXYS All rights reserved
1 - 2
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low I
RM
-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
A
A C A
C (TAB)
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 60-12A
I
FAV
= 2x 30 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
RRM
Type
V V
1200 1200 DSEC 60-12A
Symbol Conditions Maximum Ratings
I
FRMS
70 A
I
FAVM
T
C
= 115°C; rectangular, d = 0.5 30 A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine 200 A
E
AS
T
VJ
= 25°C; non-repetitive 14 mJ
I
AS
= 11.5 A; L = 180 µH
I
AR
V
A
= 1.25·V
R
typ.; f = 10 kHz; repetitive 1.2 A
T
VJ
-55...+175 °C
T
VJM
175 °C
T
stg
-55...+150 °C
P
tot
T
C
= 25°C 165 W
M
d
mounting torque 0.8...1.2 Nm
Weight typical 6 g
Symbol Conditions Characteristic Values
typ. max.
I
R
① T
VJ
= 25°C V
R
= V
RRM
250 mA
T
VJ
= 150°C V
R
= V
RRM
1mA
V
F
② I
F
= 30 A; T
VJ
= 150°C 1.78 V
T
VJ
= 25°C 2.74 V
R
thJC
0.9 K/W
R
thCH
0.25 K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/ms; 40 ns
V
R
= 30 V; T
VJ
= 25°C
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/ms5.5 A
T
VJ
= 100°C
008