Datasheet

HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low cathode to tab capacitance (<15pF)
l
Planar passivated chips
l
Very short recovery time
l
Extremely low switching losses
l
Low I
RM
-values
l
Soft recovery behaviour
l
Epoxy meets UL 94V-0
Applications
l
Antiparallel diode for high frequency
switching devices
l
Antisaturation diode
l
Snubber diode
l
Free wheeling diode in converters
and motor control circuits
l
Rectifiers in switch mode power
supplies (SMPS)
l
Inductive heating
l
Uninterruptible power supplies (UPS)
l
Ultrasonic cleaners and welders
Advantages
l
Avalanche voltage rated for reliable
operation
l
Soft reverse recovery for low EMI/RFI
l
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
= 30 A
V
RRM
= 600 V
t
rr
= 30 ns
V
RRM
Q V
RRM
Type
V V
600 300 DSEE29-06CC
Symbol Conditions Maximum Ratings
I
FRMS
60 A
I
FAVM
Q T
C
= 115°C; rectangular, d = 0.5 30 A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine 200 A
E
AS
T
VJ
= 25°C; non-repetitive 1.2 mJ
I
AS
= 3 A; L = 180 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive 0.3 A
T
VJ
-55...+175 °C
T
VJM
175 °C
T
stg
-55...+150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 260 °C
P
tot
T
C
= 25°C 165 W
V
ISOL
50/60 Hz RMS; I
ISOL
≤ 1 mA 2500 V~
F
C
Mounting force 11...65 / 2.5...15 N / lb
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
I
R
R
T
VJ
= 25°C V
R
= V
RRM
100 µA
T
VJ
= 150°C V
R
= V
RRM
S
1mA
V
F
S
I
F
= 30 A; T
VJ
= 125°C 1.01 V
T
VJ
= 25°C 1.26 V
R
thJC
0.9 K/W
R
thCH
0.6 K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/µs; 30 ns
V
R
= 30 V
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs 4.5 7 A
T
VJ
= 100°C
98815 (04/01)
© 2001 IXYS All rights reserved
DSEE29-06CC
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Q Diodes connected in series
R Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
SPulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.