Datasheet
DSEE55-24N1F
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
800
I A
V
F
2.45
R 0.60 K/W
V
R
=
1 3 5
min.
60
t = 10 ms
Applications:
V
RRM
V1200
1T
VJ
V°C=
T
VJ
°C=mA4
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 110°C
d =
P
tot
250 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=
1200
60
60
T
VJ
= 45°C
DSEE55-24N1F
V
A
1200
V1200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
2.90
T
VJ
°C=25
C
J
j
unction capacitance
V = V; T
150
V
F0
V0.97T
VJ
= 175°C
r
F
6.8
f = 1 MHz = °C25
mΩ
V1.56T
VJ
=°C
I
F
=A
V
60
2.00
I
F
=A120
I
F
=A120
threshold voltage
slope resistance
for power loss calculation only
Backside: isolated
35 A
T
VJ
=°C
reverse recovery time
A60
75
220
ns
(50 Hz), sine
t
rr
= 40 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
i4-Pac
●
rDCB isolated backside
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
R
VJ
I
RM
max. reverse recovery current
I
F
=A;60
25
T=100°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V600
T
VJ
=°C25
T=100°C
VJ
mA
48600 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved