Datasheet

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2 - 3
20080901b
DSEI60-06A
IXYS reserves the right to change limits, test conditions and dimensions.
200 600 10000 400 800
0.0
0.2
0.4
0.6
0.8
10
-3
10
-2
10
-1
10
0
10
1
0.0
0.2
0.4
0.6
0.8
1.0
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C]
t [s]
0 200 400 600 800 1000 1200
0
4
8
12
16
20
0
200
400
600
800
1000
V
FR
[V]
200 600 10000 400 800
10
30
50
0
20
40
10
0
10
1
10
2
10
3
0
1
2
3
4
0123
0
20
40
60
80
100
120
140
160
180
I
RM
[A]
Q
r
[µC]
I
F
[A]
V
F
[V]
-di
F
/dt [A/µs]
t
rr
[ns]
t
fr
[µs]
Z
thJC
[K/W]
-di
F
/dt [A/µs]
-di
F
/dt [A/µs]
-di
F
/dt [A/µs]
DSEI 60-06
T
VJ
= 150°C
100°C
25°C
T
VJ
= 100°C
V
R
= 350 V
typ.
T
VJ
= 100°C
V
R
= 350 V
typ.
I
RM
Q
r
T
VJ
= 100°C
V
R
= 350 V
I
F
= 60 A
120 A
60 A
30 A
typ.
max.
T
VJ
= 125°C
I
F
= 60 A
V
FR
t
rr
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
Fig. 1 Forward current
versus voltage drop
Fig. 2 Recovery charge
versus -di
F
/dt
Fig.3 Peakreversecurrent
versus -di
F
/dt
Fig. 4 Dynamic parameters vs.
junction temperature
Fig. 5 Recovery time
versus -di
F
/dt
Fig. 7 Transient thermal resistance junction to case
Fig.6 Peakforwardvoltage
versus di
F
/dt