Datasheet

IXA20I1200PB
preliminary
Single IGBT
nC
I = A; V = V
XPT IGBT
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
C25
A
t
A
RBSOA 45
V 2.1 V
(
C
)
2
(E) 3
(G) 1
min.
60
Applications:
V
CES
V1200
33T = 25°C
C
T = 90°C
C
A22
Package:
Part number
T = 125°C
VJ
V = V;
GE
R =
G
56
V
GE(th)
6.5 V
2.1
V
5.5
I
V
C25
=
=
33
1200
15
IXA20I1200PB
A
V
Collector emitter voltage
Collector current
Reverse bias safe operation area
Gate emitter threshold voltage
Conditions
Unit
T = 25°C
VJ
P
tot
W130T = 25°C
VJ
µs10
V = V
CEK
Ω
1200
V = V; V = ±15 V
CE
900
Total power dissipation
= 1.8
V
Housing: TO-220
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
V
GES
V±20
Maximum DC gate voltage
T = 25°C
VJ
I
SC
; non-repetitive
Short circuit current
I
CES
mAV = V ; V = 0 V 0.1
Collector emitter leakage current
CE
T = 25°C
VJ
mA0.1
I
GES
nA500
Gate emitter leakage current
R
thJC
0.95
Thermal resistance juntion to case
t
d(on)
ns70
Turn-on delay time
40 ns
T = °C125
Turn-on energy per pulse
ns
250
100 ns
1.55
1.7
47
mJ
mJ
Inductive load
VJ
CE(sat)
Collector emitter saturation voltage
SC
Short circuit duration
CES
V
CE(sat)typ
I
C90
R =
G
SCSOA
Short circuit safe operation area
GE
Ω
I = mA; V = V
C
GE
T = 25°C
VJ
T = °C
VJ
125
1.8
C
GE
CE
CES GE
6
T = °C
VJ
125
V = 0 V; V = ±20 V
CE GE
V = V; I = A
CE
C
Current rise time
Turn-off delay time
Current fall time
Turn-off energy per pulse
t
r
t
d(off)
t
f
E
on
E
off
V = ±15 V; R =
GE
G
Ω
Q
Gon
Total gate charge
K/W
V = V; V = V; I = A
CE GE C
56
16 15
0.6
600 15
56
600 15 15
A
T = 125°C
VJ
IGBT
V = 0 V
GE
IXYS reserves the right to change limits, conditions and dimensions. 20090409
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved

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