Datasheet

IXA20I1200PB
preliminary
0123
0
5
10
15
20
25
3
0
0 5 10 15 20 25 30 35
0
1
2
3
4
012345
0
5
10
15
20
25
3
0
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5678910111213
0
5
10
15
20
25
30
0 102030405060
0
5
10
15
20
13 V
40 60 80 100 120 140 16
0
1.2
1.6
2.0
2.4
2.8
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[ ]
E
[mJ]
I
C
[A]
R
G
=56
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
E
off
I
C
=15A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
=125°C
I
C
=15A
V
CE
=600V
T
VJ
= 125°C
T
VJ
=25°C
V
GE
=15 V
T
VJ
=125°C
T
VJ
= 125°C
T
VJ
=25°C
IXYS reserves the right to change limits, conditions and dimensions. 20090409
Data according to IEC 60747and per diode unless otherwise specified
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