Datasheet

ManualsBrandsIXYS ManualsPMICsPMIC - gate drivers Non-inverting Low side SOIC 8 N

DS-IXD_604 - R02 www.clare.com 1

RoHS

2002/95/EC

Features

• 4A Peak Source/Sink Drive Current

• Wide Operating Voltage Range: 4.5V to 35V

• -40°C to +125°C Extended Operating Temperature

Range

• Logic Input Withstands Negative Swing of up to 5V

• Matched Rise and Fall Times

• Low Propagation Delay Time

• Low, 10μA Supply Current

• Low Output Impedance

Applications

• Efficient Power MOSFET and IGBT Switching

• Switch Mode Power Supplies

• Motor Controls

• DC to DC Converters

• Class-D Switching Amplifiers

• Pulse Transformer Driver

Description

The IXDD604/IXDF604/IXDI604/IXDN604 dual

high-speed gate drivers are especially well suited for

driving the latest IXYS MOSFETs and IGBTs. Each of

the two outputs can source and sink 4A of peak

current while producing voltage rise and fall times of

less than 10ns. The input of each driver is virtually

immune to latch up, and proprietary circuitry

eliminates cross conduction and current

“shoot-through.” Low propagation delay and fast,

matched rise and fall times make the IXD_604 family

ideal for high-frequency and high-power applications.

The IXDD604 is a dual non-inverting driver with an

enable. The IXDN604 is a dual non-inverting driver,

the IXDI604 is a dual inverting driver, and the IXDF604

has one inverting driver and one non-inverting driver.

The IXD_604 family is available in a standard 8-pin

DIP (PI), 8-pin SOIC (SIA), 8-pin Power SOIC with an

exposed metal back (SI), and an 8-pin DFN (D2)

package.

Ordering Information

Part Number

Logic

Configuration

Package Type

Packing

Method

Quantity

IXDD604D2TR 8-Pin DFN Tape & Reel 2000

IXDD604PI 8-Pin DIP Tube 50

IXDD604SI 8-Pin Power SOIC with Exposed Metal Back Tube 100

IXDD604SITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel 2000

IXDD604SIA 8-Pin SOIC Tube 100

IXDD604SIATR 8-Pin SOIC Tape & Reel 2000

IXDF604PI 8-Pin DIP Tube 50

IXDF604SI 8-Pin Power SOIC with Exposed Metal Back Tube 100

IXDF604SITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel 2000

IXDF604SIA 8-Pin SOIC Tube 100

IXDF604SIATR 8-Pin SOIC Tape & Reel 2000

IXDI604PI 8-Pin DIP Tube 50

IXDI604SI 8-Pin Power SOIC with Exposed Metal Back Tube 100

IXDI604SITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel 2000

IXDI604SIA 8-Pin SOIC Tube 100

IXDI604SIATR 8-Pin SOIC Tape & Reel 2000

IXDN604PI 8-Pin DIP Tube 50

IXDN604SI 8-Pin Power SOIC with Exposed Metal Back Tube 100

IXDN604SITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel 2000

IXDN604SIA 8-Pin SOIC Tube 100

IXDN604SIATR 8-Pin SOIC Tape & Reel 2000

ENA

INA

ENB

INB

OUTA

OUTB

INA

INB

OUTA

OUTB

INA

INB

OUTA

OUTB

INA

INB

OUTA

OUTB

IXD_604

4-Ampere Dual Low-Side

Ultrafast MOSFET Drivers

Summary of content (13 pages)

PAGE 1
IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.
PAGE 2
IXD_604 1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 Pin Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
IXD_604 1 Specifications 1.1 Pin Configurations 1.
PAGE 4
IXD_604 1.5 Electrical Characteristics: TA = 25°C Test Conditions: 4.5V < VCC < 35V, one channel (unless otherwise noted). Parameter Conditions Symbol Minimum Typical Maximum Input Voltage, High 4.5V < VCC < 18V VIH 3.0 - - Input Voltage, Low 4.5V < VCC < 18V VIL - - 0.8 0V < VIN < VCC IIN - ±10 μA High EN Input Voltage IXDD604 only VENH 2/3VCC - Low EN Input Voltage IXDD604 only VENL - V Output Voltage, High - VOH VCC-0.
PAGE 5
IXD_604 1.7 Thermal Characteristics Package Parameter Symbol Rating D2 (8-Pin DFN) Units 35 PI (8-Pin DIP) SI (8-Pin Power SOIC) Thermal Resistance, Junction-to-Ambient θJA Thermal Resistance, Junction-to-Case θJC 125 °C/W 85 SIA (8-Pin SOIC) 120 SI (8-Pin Power SOIC) 10 °C/W 2 IXD_604 Performance 2.1 Timing Diagrams VIH INx VIH INx VIL VIL tondly toffdly tondly toffdly 90% OUTx 90% OUTx 10% 10% tf tr tf tr 2.2 Characteristics Test Diagram ENA ENB + 0.
PAGE 6
IXD_604 3 Block Diagrams & Truth Tables 3.1 IXDD604 3.3 IXDF604 IXDD604 IXDF604 VCC VCC 200kΩ OUTA INA VCC ENA INA GND OUTA VCC VCC 200kΩ OUTB INB VCC ENB INB OUTB GND INA OUTA 0 1 1 0 INB OUTB 0 0 0 1 1 1 INX ENX OUTX 0 1 or open 1 1 or open 0 0 Z 1 0 Z 3.4 IXDN604 3.2 IXDI604 IXDI604 IXDN604 VCC OUTA INA VCC OUTA INA GND GND VCC OUTB INB 6 VCC OUTB INB INX OUTX INX OUTX 0 1 0 0 1 0 1 1 www.clare.
PAGE 7
IXD_604 4 Typical Performance Characteristics A&B Rise Times vs. Supply Voltage (Input=0-5V, f=10kHz, TA=25ºC) 120 A&B Rise and Fall Times vs. Temperature (Input=0-5V, VCC=18V, CL=1nF) A&B Fall Times vs. Supply Voltage (Input=0-5V, f=10kHz, TA=25ºC) 120 10 80 CL=10nF CL=1nF CL=470pF 60 40 80 40 20 0 0 15 20 25 30 Supply Voltage (V) 120 40 0 5 10 15 20 25 30 Supply Voltage (V) A&B Rise Time vs. Load Capacitance at Various VCC Levels VCC=4.
PAGE 8
IXD_604 100 400 10 Supply Current vs. Load Capacitance Both Outputs Active (VCC=18V) 250 f=1MHz f=500kHz f=100kHz f=50kHz 200 f=2MHz 350 300 400 150 100 250 200 150 100 50 f=2MHz f=1MHz f=500kHz f=100kHz f=50kHz 250 200 150 100 50 Supply Current vs. Frequency Both Outputs Active (VCC=12V) 100 10 1 0.1 10 100 1000 Frequency (kHz) CL=10nF CL=1nF CL=470pF 100 10 1 10000 1 Supply Current vs. Frequency Both Outputs Active (VCC=8V) 1000 CL=10nF CL=1nF CL=470pF 10000 0.
PAGE 9
IXD_604 Output Source Current vs. Temperature (VCC=18V, CL=10nF) 6.0 Output Sink Current (A) Output Source Current (A) 6 5 4 3 2 0 20 40 60 80 Temperature (ºC) 100 120 140 4.0 3.0 -40 -20 High State Output Resistance vs. Supply Voltage (IOUT= -10mA) 4.0 3.5 3.0 3.0 2.5 2.0 1.5 1.0 0 20 40 60 80 Temperature (ºC) 100 120 140 Low State Output Resistance vs. Supply Voltage (IOUT= +10mA) 4.0 3.5 Resistance (Ω) Resistance (Ω) 5.0 2.0 -40 -20 2.5 2.0 1.5 1.0 0.5 0.5 0.0 0.
PAGE 10
IXD_604 5 Manufacturing Information 5.1 Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. Clare classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation.
PAGE 11
IXD_604 5.4 Mechanical Dimensions 5.4.1 SIA (8-Pin SOIC) 0.10 / 0.25 (0.004 / 0.010) 1.27 (0.050) 0.40 / 1.27 (0.016 / 0.050) 3.80 / 4.00 (0.150 / 0.157) 5.80 / 6.20 (0.228 / 0.244) 5.40 (0.213) 1.55 (0.061) PIN 1 0.31 / 0.51 (0.012 / 0.020) 1.27 BSC (0.05 BSC) 0.25 / 0.50 x45º (0.010 / 0.020 x45º) 0.60 (0.024) 0º / 8º 4.80 / 5.00 (0.190 / 0.197) Recommended PCB Land Pattern Dimensions mm MIN / mm MAX (inches MIN / inches MAX) 0.10 / 0.25 (0.004 / 0.010) 1.30 / 1.75 (0.051 / 0.
PAGE 12
IXD_604 5.4.3 Tape & Reel Information for SI and SIA Packages 330.2 DIA. (13.00 DIA.) 0.30 ± 0.05 R0.50 TYP ∅1.55 ± 0.05 4.00 ± 0.10 See Note #2 2.00 ± 0.10 B 1.75 ± 0.10 Top Cover Tape Thickness 0.102 MAX. (0.004 MAX.) 5.50 ± 0.10 (3.40) B0=5.20 ± 0.10 A Embossed Carrier 1.80 ± 0.10 K0=2.30 ± 0.10 SECTION B-B Embossment 12.00 ± 0.30 A B A0=6.40 ± 0.10 8.00 ± 0.10 ∅1.50 (MIN) (4.70) (1.20) (70º) SECTION A-A NOTES: 1. A0 & B0 measured at 0.3mm above base of pocket. 2.
PAGE 13
IXD_604 5.4.5 D2 (8-Pin DFN) 5.00 BSC (0.197 BSC) 0.80 / 1.00 (0.031 / 0.039) 0.20 REF (0.008 REF) Pin 1 4.00 BSC (0.158 BSC) 0.35 x 45º (0.014 x 45º) 0.95 (0.037) 4.50 (0.177) 3.05 (0.120) 0.45 (0.018) 0.00 / 0.05 (0.000 / 0.002) 2.55 (0.100) 1.20 (0.047) 0.76 / 0.81 (0.030 / 0.032) Recommended PCB Land Pattern 3.04 / 3.09 (0.120 / 0.122) Dimensions mm MIN / mm MAX (inches MIN / inches MAX) 0.30 / 0.45 (0.012 / 0.018) 0.95 BSC (0.037 BSC) Pin 1 Pin 8 2.54 / 2.59 (0.100 / 0.102) 0.35 / 0.