Datasheet
© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 500 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 500 V
V
GSS
Continuous 30 V
V
GSM
Transient 40 V
I
D25
T
C
= 25C 132 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
330 A
I
A
T
C
= 25C 66A
E
AS
T
C
= 25C2J
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150C 35 V/ns
P
D
T
C
= 25C 1890 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
F
C
Mounting Force 30..120/6.7..27 N/lb
Weight 10 g
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.0 5.0 V
I
GSS
V
GS
= 30V, V
DS
= 0V 200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 A
T
J
= 125C 3 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
DSS
, Note 1 39 m
IXFB132N50P3
V
DSS
= 500V
I
D25
= 132A
R
DS(on)
39m
t
rr
250ns
DS100315C(2/15)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Features
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
Advantages
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Polar3
TM
HiPerFET
TM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
PLUS264
TM
Tab
S
G
D