Datasheet

© 2015 IXYS CORPORATION, All Rights Reserved
IXFB132N50P3
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
10
12
14
16
18
20
22
24
26
28
30
30 40 50 60 70 80 90 100
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
50
100
150
200
250
300
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
20
40
60
80
100
120
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 250V
I
D
= 100A
I
D
= 66A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
10
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
85
90
95
100
105
110
115
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 250V
I
D
= 100A
I
D
= 66A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
12
14
16
18
20
22
24
26
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 250V
I
D
= 100A
I
D
= 66A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
5
10
15
20
25
30
35
30 40 50 60 70 80 90 100
I
D
- Amperes
t
f
- Nanoseconds
70
80
90
100
110
120
130
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
50
100
150
200
250
300
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
80
160
240
320
400
480
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 250V
I
D
= 66A
I
D
= 100A