Datasheet

© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 1mA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.0 5.5 V
I
GSS
V
GS
= ±30 V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
50 μA
V
GS
= 0V T
J
= 125°C 3 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 250 mΩ
DS98949F(05/08)
HiPerFET
TM
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low Intrinsic R
G
High dV/dt, Low t
rr
Features
z
Double metal process for low gate
resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
Pulse generation
z
Laser drivers
Advantages
z
PLUS 264
TM
package for clip or spring
mounting
z
Space savings
z
High power density
IXFB38N100Q2
V
DSS
= 1000V
I
D25
= 38A
R
DS(on)
≤≤
≤≤
≤ 250m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 300ns
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C38A
I
DM
T
C
= 25°C, pulse width limited by T
JM
152 A
I
A
T
C
= 25°C38A
E
AS
T
C
= 25°C5J
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 20 V/ns
P
D
T
C
= 25°C 890 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10s 260 °C
F
C
Mounting force 30..120/6.7..27 N / lbs
Weight 10 g
PLUS264
TM
( IXFB)
G
D
S
( TAB )
G = Gate D = Drain
S = Source TAB = Drain