Datasheet
© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.0 5.5 V
I
GSS
V
GS
= ±30 V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 μA
T
J
= 125°C 3 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 88 mΩ
DS99006C(7/10)
HiPerFET
TM
Power
MOSFET Q2-Class
Features
z
Double Metal Process for Low Gate
Resistance
z
Avalanche Rated
z
Low Package Inductance
z
Fast Intrinsic Rectifier
Advantages
z
PLUS 264
TM
Package for Clip or Spring
Mounting
z
Space Savings
z
High Power Density
Applications
z
DC-DC Converters
z
Switch-Mode and Resonant-Mode
Power Supplies, > 500kHz Switching
z
DC Choppers
z
Pulse Generation
z
Laser Drivers
IXFB70N60Q2
V
DSS
= 600V
I
D25
= 70A
R
DS(on)
≤≤
≤≤
≤ 88m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 250ns
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 600 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 600 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C70A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
280 A
I
A
T
C
= 25°C70A
E
AS
T
C
= 25°C5J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 20 V/ns
P
D
T
C
= 25°C 890 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
F
C
Mounting Force 30..120/6.7..27 N/lbs
Weight 10 g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
G
,
Low Intrinsic R
G
High dv/dt, Low t
rr
G = Gate D = Drain
S = Source Tab = Drain
PLUS264
TM
Tab
S
G
D