Datasheet

© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 14 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
56 A
I
A
T
C
= 25°C 14 A
E
AS
T
C
= 25°C 2.5 J
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 20 V/ns
P
D
T
C
= 25°C 500 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.063 in) from case for 10s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 6 g
HiPerFET
TM
Power MOSFETs
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Features

Double metal process for low gate
resistance

International standard package

Epoxy meet UL 94 V-0, flammability
classification

Avalanche energy and current rated

Fast intrinsic Rectifier
Applications

DC-DC converters

Switched-mode and resonant-mode
power supplies, >500kHz switching

DC choppers

Pulse generation

Laser drivers
Advantages

Easy to mount

Space savings

High power density
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS
= 0V, I
D
= 250μA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 3.0 5.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
25 μA
V
GS
= 0V T
J
= 125°C 1 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25,
Note 1 950 mΩ
G = Gate D = Drain
S = Source TAB = Drain
DS99073A(5/08)
V
DSS
= 1000V
I
D25
= 14A
R
DS(on)
≤≤
≤≤
≤ 950m
ΩΩ
ΩΩ
Ω
t
rr
≤ ≤
≤ ≤
≤ 300ns
IXFH14N100Q2
G
D
S
TO-247 (IXFH)
(TAB)
Preliminary Technical Information