Datasheet

© 2008 IXYS CORPORATION, All rights reserved
DS99843B(04/08)
V
DSS
= 1000V
I
D25
= 20A
R
DS(on)
≤≤
≤≤
≤ 570m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
z
International standard packages
z
Fast recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C20A
I
DM
T
C
= 25°C, pulse width limited by T
JM
50 A
I
AR
T
C
= 25°C10A
E
AS
T
C
= 25°C 800 mJ
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
,T
J
≤ 150°C 15 V/ns
P
D
T
C
= 25°C 660 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum lead temperature for soldering 300 °C
T
SOLD
Plastic body for 10s 260 °C
M
d
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 5 g
G = Gate D = Drain
S = Source TAB = Drain
IXFH20N100P
IXFT20N100P
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA 3.5 6.5 V
I
GSS
V
GS
= ± 30V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
25 μA
V
GS
= 0V T
J
= 125°C 1.5 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 470 570 mΩ
TO-268 (IXFT)
G
S
TAB
Applications:
z
Switched-mode and resonant-mode
power supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC motor controls
z
Robotics and servo controls
TAB
TO-247 (IXFH)
Polar
TM
Power MOSFET
HiPerFET
TM