Datasheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH20N100P
IXFT20N100P
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 8 14 S
C
iss
7300 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 456 pF
C
rss
55 pF
R
Gi
Gate input resistance 1.20 Ω
t
d(on)
40 ns
t
r
Resistive Switching Times 37 ns
t
d(off)
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
56 ns
t
f
R
G
= 2Ω (External) 45 ns
Q
g(on)
126 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
50 nC
Q
gd
55 nC
R
thJC
0.19 °C/W
R
thCS
(TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 20 A
I
SM
Repetitive, pulse width limited by T
JM
80 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
300 ns
Q
RM
0.9 μC
I
RM
9.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXFH) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
I
F
= 10A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
TO-268 Outline