Datasheet

© 2006 IXYS All rights reserved
G = Gate D = Drain
S = Source TAB = Drain
DS99276E(12/05)
PolarHV
TM
HiPerFET
Power MOSFET
V
DSS
= 500 V
I
D25
=26A
R
DS(on)
≤≤
≤≤
≤ 230 m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
l
International standard packages
l
Fast intrinsic diode
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-247 (IXFH)
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 µA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 3.0 5.5 V
I
GSS
V
GS
= ±30 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 125° C 250 µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
230 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 150° C 500 V
V
DGR
T
J
= 25° C to 150° C; R
GS
= 1 MΩ 500 V
V
GSS
Continuos ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25° C26A
I
DM
T
C
= 25° C, pulse width limited by T
JM
78 A
I
AR
T
C
= 25° C26A
E
AR
T
C
= 25° C40mJ
E
AS
T
C
= 25° C 1.0 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 10 V/ns
T
J
≤ 150° C, R
G
= 4 Ω
P
D
T
C
= 25° C 400 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 s 260 °C
M
d
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
F
C
Mounting force (PLUS220) 11..65/2.5..15 N/lb
Weight TO-247 6 g
PLUS220 & PLUS220SMD 5 g
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
G
S
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D
PLUS220 (IXFV)
D (TAB)
D (TAB)