Datasheet

© 2006 IXYS All rights reserved
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
DS99435E(12/06)
PolarHV
TM
Power MOSFET
V
DSS
= 600 V
I
D25
=26 A
R
DS(on)
≤≤
≤≤
≤ 270 m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200 ns
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 μA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2.5 5.0 V
I
GSS
V
GS
= ±30 V, V
DS
= 0 V ±100 nA
I
DSS
V
DS
= V
DSS
25 μA
V
GS
= 0 V T
J
= 125°C 250 μA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
270 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 600 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 600 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C26A
I
DM
T
C
= 25°C, pulse width limited by T
JM
65 A
I
AR
T
C
= 25°C13A
E
AR
T
C
= 25°C40mJ
E
AS
T
C
= 25°C 1.2 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/μs, V
DD
≤ V
DSS
10 V/ns
T
J
≤ 150°C, R
G
= 5 Ω
P
D
T
C
= 25°C 460 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 ° C
T
SOLD
Plastic body for 10 s 260 ° C
M
d
Mounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in.
F
C
Mounting force (PLUS220) 11..65/2.5..15 N/lb
Weight TO-247 6.0 g
TO-268 5.0 g
PLUS220 & PLUS220SMD 4.0 g
IXFH26N60P
IXFT26N60P
IXFV26N60P
IXFV26N60PS
TO-268 (IXFT)
G
S
D (TAB)
TO-247 (IXFH)
G
S
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D
PLUS220 (IXFV)
D (TAB)
Features
z
Fast Recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
International standard packages
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density