Datasheet

IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
6
12
18
24
30
36
42
48
54
60
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
º
C
0
4
8
12
16
20
24
01234567
V
D S
- Volts
I
D
- Amperes
V
GS =
10V
7V
5V
6V
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test 16 26 S
C
iss
4150 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 400 pF
C
rss
27 pF
t
d(on)
25 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 I
D25
27 ns
t
d(off)
R
G
= 5 Ω (External) 75 ns
t
f
21 ns
Q
g(on)
72 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27 nC
Q
gd
24 nC
R
thJC
0.27 °C/W
R
thCs
(PLUS220 & TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 26 A
I
SM
Repetitive 78 A
V
SD
I
F
= I
S
, V
GS
= 0 V, pulse test 1.5 V
t
rr
I
F
= 25A, -di/dt = 100 A/μs 150 200 ns
I
RM
V
R
= 100V; V
GS
= 0 V 7 A
Q
RM
0.7 μC
Characteristic Curves
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2