Datasheet

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IXFH320N10T2
IXFT320N10T2
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
0
50
100
150
200
250
300
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 50V
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
100
200
300
400
500
600
12345678910
R
G
- Ohms
t
r
- Nanoseconds
10
30
50
70
90
110
130
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
100
150
200
250
300
350
400
450
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
60
70
80
90
100
110
120
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
0
50
100
150
200
250
300
350
400
450
500
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
60
65
70
75
80
85
90
95
100
105
110
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
0
50
100
150
200
250
300
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
100
200
300
400
500
600
700
800
900
12345678910
R
G
- Ohms
t
f
- Nanoseconds
50
100
150
200
250
300
350
400
450
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A