Datasheet
© 2014 IXYS CORPORATION, All Rights Reserved
DS100296C(7/14)
IXFH42N60P3
Polar3
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 600 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 600 V
V
GSS
Continuous 30 V
V
GSM
Transient 40 V
I
D25
T
C
= 25C 42 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
100 A
I
A
T
C
= 25C21 A
E
AS
T
C
= 25C1 J
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 35 V/ns
P
D
T
C
= 25C 830 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13 / 10 Nm/lb.in
Weight 6 g
V
DSS
= 600V
I
D25
= 42A
R
DS(on)
185m
Features
International Standard Package
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 3.0 5.0 V
I
GSS
V
GS
= 30V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 A
T
J
= 125C 1.5 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 185 m
G = Gate D = Drain
S = Source Tab = Drain
TO-247
G
S
Tab
D
Preliminary Technical Information