Datasheet

© 2012 IXYS CORPORATION, All Rights Reserved
DS100310A(01/12)
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
Polar3
TM
HiperFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 600 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 600 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C 50 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
125 A
I
A
T
C
= 25°C25 A
E
AS
T
C
= 25°C1 J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 35 V/ns
P
D
T
C
= 25°C 1040 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062in.) from Case for 10s 300 °C
T
sold
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in.
Weight TO-268 4.0 g
TO-3P 5.5 g
TO-247 6.0 g
V
DSS
= 600V
I
D25
= 50A
R
DS(on)
≤≤
≤≤
≤
145m
ΩΩ
ΩΩ
Ω
Features
z
Fast Intrinsic Rectifier
z
Avalanche Rated
z
Low R
DS(ON)
and Q
G
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 3.0 5.0 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 μA
T
J
= 125°C 2 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 145 mΩ
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
S
D (Tab)
D
TO-268 (IXFT)
S
G
D (Tab)
TO-3P (IXFQ)
D
G
S
D (Tab)
Preliminary Technical Information