Datasheet

© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 300 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 300 V
V
GSS
Continuous ± 20 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C 88 A
I
L(RMS)
External Lead Current Limit 75 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
220 A
I
A
T
C
= 25°C 60 A
E
AS
T
C
= 25°C 2 J
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 10 V/ns
P
D
T
C
= 25°C 600 W
T
J
-55 to +150 °C
T
JM
+150 °C
T
stg
-55 to +150 °C
T
L
1.6mm (0.063in) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-247&TO-264) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
TO-264 10 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Polar
TM
HiPerFET
TM
Power MOSFET
IXFT88N30P
IXFH88N30P
IXFK88N30P
DS99216F(11/09)
V
DSS
= 300V
I
D25
= 88A
R
DS(on)
≤≤
≤≤
≤ 40m
ΩΩ
ΩΩ
Ω
t
rr
≤ ≤
≤ ≤
≤ 200ns
Features
z
International Standard Packages
z
Fast Intrinsic Diode
z
Avalanche Rated
z
Low R
DS(ON)
and Q
G
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
DC-DC Coverters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
AC and DC Motor Drives
z
Uninterrupted Power Supplies
z
High Speed Power Switching
Applications
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 300 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 2.5 5.0 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 μA
T
J
= 125°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 40 mΩ
G = Gate D = Drain
S = Source Tab = Drain
TO-268 (IXFT)
G
S
Tab
TO-247(IXFH)
G
D
S
Tab
TO-264 (IXFK)
Tab
S
G
D