Datasheet

© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1200 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1200 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C 26 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
60 A
I
A
T
C
= 25°C13A
E
AS
T
C
= 25°C 1.5 J
P
D
T
C
= 25°C 960 W
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 20 V/ns
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 1200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA 3.5 6.5 V
I
GSS
V
GS
= ± 30V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 μA
T
J
= 125°C 5 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 500 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK26N120P
IXFX26N120P
V
DSS
= 1200V
I
D25
= 26A
R
DS(on)
≤≤
≤≤
≤
500m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 300ns
DS99740H(10/11)
Polar
TM
HiPerFET
TM
Power MOSFETs
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
D
S
TO-264 (IXFK)
S
G
D
Tab
Features
z
Fast Intrinsic Diode
z
Dynamic dv/dt Rating
z
Avalanche Rated
z
Low R
DS(ON)
and Q
G
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Discharger Circuits in Lesers Pulsers,
Spark Igniters, RF Generators
z
High Voltage Pulse Power Supplies
z
AC and DC Motor Drives
z
High Speed Power Switching
Application