Datasheet

© 2010 IXYS Corporation, All Rights Reserved
DS99718H(03/10)
V
DSS
= 1200V
I
D25
= 32A
R
DS(on)
≤≤
≤≤
≤ 310m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1200 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1200 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 32 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
100 A
I
A
T
C
= 25°C 16 A
E
AS
T
C
= 25°C 2 J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 20 V/ns
P
D
T
C
= 25°C 1000 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
V
ISOL
50/60 Hz, RMS t = 1 minute 2500 V~
I
ISOL
≤ 1mA t = 1 second 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
IXFN32N120P
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 1200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA 3.5 6.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±300 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 μA
T
J
= 125°C 5 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 310 mΩ
Polar
TM
HiPerFET
TM
Power MOSFET
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Features
z
International Standard Package
z
miniBLOC, with Aluminium Nitride
Isolation
z
Isolation Voltage 2500 V~
z
High Current Handling Capability
z
Fast Intrinsic Diode
z
Avalanche Rated
z
Low R
DS(on)
HDMOS
TM
Process
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
High Voltage Switch-Mode and
Resonant-ModePower Supplies
z
High Voltage Pulse Power
Applications
z
High Voltage Discharge Circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
z
High Voltage DC-DC Converters
z
High Voltage DC-AC Inverters