Datasheet

IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 60N80P
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 6.25 6.5 6.75
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 1020304050607080
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220 240 260
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 400V
I
D
= 30A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f = 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal
Resistance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC / W