Datasheet
© 2006 IXYS All rights reserved
DS99559E(01/06)
PolarHV
TM
HiPerFET
Power MOSFET
V
DSS
= 600 V
I
D25
=82 A
R
DS(on)
≤≤
≤≤
≤ 75 m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 3 mA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA 3.0 5.0 V
I
GSS
V
GS
= ±30 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 125° C 1000 µA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
, Note 1 75 m Ω
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 150° C 600 V
V
DGR
T
J
= 25° C to 150° C; R
GS
= 1 MΩ 600 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25° C72A
I
DM
T
C
= 25° C, pulse width limited by T
JM
200 A
I
AR
T
C
= 25° C82A
E
AR
T
C
= 25° C 100 mJ
E
AS
T
C
= 25° C5J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 20 V/ns
T
J
≤ 150° C, R
G
= 2 Ω
P
D
T
C
= 25° C 1040 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
V
ISOL
50/60 Hz, RMS, T = 1 min 2500 V~
I
ISOL
≤ 1 mA, T = 1 s 3000 V~
M
d
Mounting torque, Terminal connection torque 1.5/13 lb.in.
Weight 30 g
IXFN 82N60P
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density